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FHC40LG
Super Low Noise HEMT FEATURES
* Low Noise Figure: 0.3dB (Typ.)@f=4GHz * High Associated Gain: 15.5dB (Typ.)@f=4GHz * Lg 0.15m, Wg = 280m * Gold Gate Metallization for High Reliability * Cost Effective Ceramic Microstrip (SMT) Package * Tape and Reel Available
DESCRIPTION
The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000. 3. The operating channel temperature (Tch) should not exceed 80C.
Symbol VDS VGS Ptot Tstg Tch
Condition
Rating 3.5 -3.0
Unit V V mW C C
Note
290 -65 to +175 175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG
Note: RF parameters for LG devices are measured on a sample basis as follows: Lot qty. or to to or Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2)
Symbol IDSS gm Vp VGSO NF Gas Rth
Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V, IDS =1mA IGS = -10A
Min. 10 45 -0.1 -3.0
Limit Typ. Max. 40 65 -1.0 0.30 15.5 220 85 -2.0 0.40 300
Unit mA mS V V dB dB C/W
VDS = 2V, IDS = 10mA, f = 4GHz 14.0 Channel to Case -
1200 1201 3201 10001
less 3200 10000 over
Edition 1.1 July 1999
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FHC40LG
Super Low Noise HEMT
POWER DERATING CURVE
300 Total Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 150 200
Ambient Temperature (C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
50 VGS =0V 40 Drain Current (mA) 30 20 10 0 -0.2V -0.4V -0.6V -0.8V -1.0V 1 2 3 4
Drain-Source Voltage (V)
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FHC40LG
Super Low Noise HEMT
TYPICAL NOISE FIGURE CIRCLE
+j50 +j100 +j25 0.5 +j10 3.0dB 0 1.5 2.0 2.5 10 25 50 100 250 1.0 +j250
opt
-j10
-j250
-j25 -j50
-j100
f=4GHz VDS=2V IDS=10mA opt=0.8757 Rn/50=0.18 NFmin=0.30dB
NOISE PARAMETERS VDS=2V, IDS=10MA Freq. (GHz) 2 4 6 8 10 12 14 16 18 opt (MAG) (ANG) 0.86 0.87 0.86 0.81 0.74 0.63 0.49 0.33 0.13 31.0 57.0 83.0 108.0 132.0 156.0 179.0 -158.0 -136.0 NFmin (dB) 0.28 0.30 0.34 0.39 0.47 0.55 0.67 0.81 1.00
Ga(max) AND |S21| vs. FREQUENCY
20 Rn/50 0.19 0.18 0.13 0.09 0.05 0.03 0.04 0.07 0.11 15 Gain (dB)
Ga(max)
VDS=2V IDS=10mA
10
|S21|
5 0 4 6 8 1012 18 20 Frequency (GHz)
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FHC40LG
Super Low Noise HEMT
+j50 +j100 +j25
S11 S22
+90
S21 S12
4 18GHZ
+j250
6 2 2 8 1GHz 1GHz 15 10 12 14
+j10
4 6 8 10 12 14 16 18GHZ
18GHZ 16 16 10 14 12 12 25 50 100 1GHz 10 8 2 6 4 250 1GHz
0
180
0.08 0.06 0.04 0.02
0
SCALE FOR |S12|
-j10
-j250
2
8 6
6 8 4
-j25 -j50
-j100
-90
FREQUENCY (GHZ)
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
S11 MAG
0.980 0.942 0.887 0.838 0.786 0.742 0.705 0.672 0.651 0.633 0.611 0.595 0.588 0.579 0.569 0.555 0.536 0.525
ANG
-20.6 -40.7 -59.4 -76.9 -93.2 -108.3 -122.1 -133.7 -143.9 -153.9 -164.1 -174.8 176.0 167.6 159.3 150.5 140.3 129.9
S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG
5.620 5.401 5.051 4.685 4.334 3.984 3.654 3.340 3.110 2.954 2.786 2.641 2.518 2.412 2.342 2.290 2.272 2.233 159.7 140.7 122.6 105.8 89.9 74.9 60.6 47.6 35.8 23.7 11.8 0.0 -11.6 -23.0 -34.6 -46.6 -59.4 -72.6 0.017 0.033 0.045 0.054 0.060 0.063 0.063 0.063 0.062 0.061 0.059 0.058 0.057 0.057 0.057 0.058 0.059 0.060 75.8 61.6 49.5 38.5 28.5 20.2 12.9 7.2 3.2 -0.2 -2.9 -5.1 -6.7 -7.9 -10.1 -12.9 -17.0 -22.4
SCALE FOR |S21|
10
2 18GHZ 4
S22 MAG
0.541 0.523 0.501 0.480 0.461 0.448 0.449 0.463 0.481 0.498 0.513 0.535 0.562 0.597 0.634 0.667 0.697 0.727
ANG
-17.8 -35.0 -51.2 -66.6 -81.3 -95.4 -108.9 -120.3 -130.1 -138.8 -147.6 -157.0 -165.3 -172.8 -179.7 173.6 166.4 158.8
Download S-Parameters, click here
FHC40LG
Super Low Noise HEMT
Case Style "LG" Metal-Ceramic Hermetic Package
4.780.5 1.50.3 (0.059) 1.780.15 1.50.3 (0.07) (0.059)
1.50.3 (0.059)
1.0 (0.039)
1
1.780.15 1.50.3 (0.07) (0.059)
4.780.5
4 3
2
0.5 (0.02)
1.3 Max (0.051)
1. 2. 3. 4.
0.1 (0.004)
Gate Source Drain Source
Unit: mm(inches)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
SuperHEMT
TM
is a trademark of Fujitsu Limited.
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